Board, Circuit; CEM-1; 4.50 in. H x 6.50 in. W; 0.042; 0.100 x 0.100; 0.062 in.
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Plugboard; Epoxy Glass; 4.5 in. H x 4.5in. W x 0.062 in. T; 0.042 in.; CEM-1
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Board, Plug; FR4 Epoxy Glass; 4.50 in. H x 6.50 in. W; 0.042; 0.100 x 0.100
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Board, Circuit; FR4 Epoxy Glass; 9.20 in. H x 11.00 in. W; 0.042; 0.100 x 0.100
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Punchboard, Copper Clad; FR4 with One Side 2 oz. Copper Clad; 0.042; 0.062 in.
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Board, Plug; CEM-1; 4.50 in. H x 6.50 in. W; 0.042; 0.100 x 0.100; 0.062 in.
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Board, Circuit; CEM-1; 4.50 in. H x 6.50 in. W; 0.042; 0.100 x 0.100; 0.062 in.
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Plugbord; FR4 Epoxy Glass (MIL - P13949type Gf); 3.94 in. H x 6.30 in. W; FR4
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Punchboard, Unclad; FR4 Epoxy Glass; 8.5 in. W x 8.5 in. L; 0.062; 0.062; FR4
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Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
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Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
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Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
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Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
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DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
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H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
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SE Series GaAs Infrared Emitting Diode, Metal Can Coaxial Package
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Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;
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Detector, Phototransistor; TO-18; NPN; 12 deg; 30 V; 0.4 V; 4 mA (Max.); 100 nA
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SFH6345 DC Input Transistor Output Optocoupler, Through Hole, 8-Pin PDIP
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Diode, Infrared Emitter; Side Looking; 880 nm; 1.7 V; 20 mA; -40 degC; 85 degC
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Detector, Phototransistor; T-1; NPN; 20deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA
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PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55
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Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)
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Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg
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Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125
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